HYG045P03LQ1C2 Description/描述:
HYG045P03LQ1C2是VDS=-30V,RDS(ON)=3.8mΩ (typ.) @VGS=-10VRDS(ON)=6.2mΩ (typ.) @VGS=-4.5V,ID=-80A的P沟道增强Mosfet。提供PPAK5*6-8L封装。
HYG045P03LQ1C2 Features/特性:
-30V/-80A
RDS(ON)=3.8 mΩ (typ.) @VGS=-10V
RDS(ON)=6.2mΩ (typ.) @VGS=-4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen- Free Devices Available
HYG045P03LQ1C2 Applications/应用:
Switching Application
Power Management for DC/DC
Battery Protection
HYG045P03LQ1C2 Ordering Information/订购信息:
Package Type
|
Unit
|
Quantity
|
PPAK5*6-8L
|
Reel
|
5000
|
HYG045P03LQ1C2 TO252 Pin Configuration/引脚配置:
HYG045P03LQ1C2 Avalanche Test Circuit/雪崩试验电路:
HYG045P03LQ1C2 Switching Time Test Circuit/开关时间测试电路:
HYG045P03LQ1C2 Gate Charge Test Circuit/闸电荷测试电路: