HYG400P10LR1P/B概述:
HYG400P10LR1P/B是VDS=-100V,ID=-40A,RDS(ON)=42mΩ(typ.)@VGS=-10V,RDS(ON)=48mΩ(typ.)@VGS=-4.5V的P沟道MOSFET.
HYG400P10LR1P/B提供TO-220FB-3L/TO-263-2L封装.
HYG400P10LR1P/B特性:
-100V/-40A
RDS(ON)= 42mΩ(typ.) @ VGS = -10V
RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V
100% Avalanche Tested
Reliable and Rugged
Lead Free and Green Devices Available (RoHS Compliant)
HYG400P10LR1P/B应用:
Portable equipment and battery powered systems
DC-DC Converters
Motor control.
HYG400P10LR1P/B典型应用电路与封装图: