HRT60P18x概述：
HRT60P18x是VDS=-60V,ID=-65A的P沟道MOSFET.HRT60P18x提供TO-263/TO-25/TO-251/TO-220封装。
P-Channel Power MOSFET designed by HR-Micro Semiconductor Company,according to the advanced Trench Technology.This device provides an excellent gate charge and Rds(on),which leads to extremely communication and conduction losses.
HRT60P18x特性：
VDS=-60V,ID=-65A
RDS(on)18mΩ@VGS=-10V
Low FOM RDS(on)×Qgd
100% avalanche tested
Easy to use/drive
RoHS compliant
HRT60P18x应用：
Load Switch
HRT60P18x原理图及封装图：
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