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PE4435A SOP8

     PE4435A是VDS〉-30V,ID=-10.5A,RDS(on)<20mΩ@VGS=-10V,RDS(on)<35mΩ@VGS=-4.5V的P沟道增强型功率MOSFET,
     PE4435A丝印:4435,PE4435A提供SOP-8封装
     The PE4435A uses advanced trench technology to provide,excellent RDS , low gate charge and operation with gate,voltages as low as -4.5V. 
    PE4435A概述:
         PE4435A是VDS〉-30V,ID=-10.5A,RDS(on)<20mΩ@VGS=-10V,RDS(on)<35mΩ@VGS=-4.5V的P沟道增强型功率MOSFET,
         PE4435A丝印:4435,PE4435A提供SOP-8封装
         The PE4435A uses advanced trench technology to provide,excellent RDS , low gate charge and operation with gate,voltages as low as -4.5V. 

    PE4435A特性:
    VDS〉-30V,ID=-10.5A 
    RDS(on)<20m?@VGS=-10V 
    RDS(on)<35m?@VGS=-4.5V 
    High Power and current handing capability 
    Lead free product is acquired
    Surface Mount Package
    PE4435A丝印:4435
    PE4435A提供SOP-8封装

    PE4435A应用
    Battery Switch
    Load switch
    Power management

    PE4435A典型应用电路图:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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