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PE8345G DFN5x6-8L

    PE8345G是VDS=30V,ID=45A,RDS(ON)<7.2mΩ@VGS=10V,RDS(ON)<13mΩ@VGS=4.5V的N沟道MOSFET。
    PE8345G的丝印是PE8345G,PE8345G提供DFN5x6-8L封装。
    The PE8345G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8345G概述:
        PE8345G是VDS=30V,ID=45A,RDS(ON)<7.2mΩ@VGS=10V,RDS(ON)<13mΩ@VGS=4.5V的N沟道MOSFET。
        PE8345G的丝印是PE8345G,PE8345G提供DFN5x6-8L封装。
        The PE8345G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8345G特性:
    VDS = 30V, ID = 45A
    RDS(ON) < 7.2mΩ @ VGS=10V
    RDS(ON) < 13mΩ @VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8345G应用:
    Battery management
    Motor controller and driver
    PWM applications
    Load switch

    PE8345G典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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