CST30N03 Description:
CST30N03是VDS=30V,REDSON=9.5mΩ,ID=30A的N沟道Mosfet，封装是TO252。
The CST30N03 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
CST30N03是VDS=30V,REDSON=9.5mΩ,ID=30A的N沟道Mosfet，封装是TO252。
The CST30N03 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The CST30N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST30N03 Features：
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST30N03 Product Summary：
|
BVDSS
|
RDSON
|
ID
|
|
30V
|
9.5mΩ
|
30A
|
CST30N03 TO252 Pin Configuration:
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