CST100N03 Description:
CST100N03是BVDSS=30V,RDSON=3.5mΩ,ID=100A的N沟通Mosfet,提供TO252封装.
CST100N03是BVDSS=30V,RDSON=3.5mΩ,ID=100A的N沟通Mosfet,提供TO252封装.
CST100N03是高电池密度密集的N-ch MOSFETs,它为大多数同步降压转换器应用提供了优秀的RDSON和栅极电荷。
CST100N03满足RoHS和绿色产品的要求,100% EAS保证,全功能可靠性得到批准。
The CST100N03 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The CST100N03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST100N03 Features:
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST100N03 Product Summary:
BVDSS
|
RDSON
|
ID
|
30V
|
3.5mΩ
|
100A
|
CST100N03 TO252 Pin Configuration:
CST100N03 Test Circuit: