HYG053N10NS1D/U/V Description:
HYG053N10NS1D/U/V是VDS=100V,ID=95A,RDS(ON)=5.2mΩ(typ.)@VGS=10V的N沟道MOSFET.
HYG053N10NS1D/U/V Feature:
100V/95A
RDS(ON)=5.2mΩ(typ.)@VGS = 10V
100% Avalanche Tested
Reliable and Rugged
Halogen-Free Devices Available(RoHS Compliant)
HYG053N10NS1D/U/V Applications:
Switching Application
Motor control and drive
Battery management
HYG053N10NS1D/U/V Pin Description:
HYG053N10NS1D/U/V Avalanche Test Circuit:
HYG053N10NS1D/U/V Switching Time Test Circuit:
HYG053N10NS1D/U/V Gate Charge Test Circuit:
HYG053N10NS1D/U/V Device Per Unit:
| Package | Type Unit | Quantity |
| TO-252-2L | Tube | 75 |
| TO-252-2L | Reel | 2500 |
| TO-251-3L | Tube | 75 |
| TO-251-3S | Tube | 75 |
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