MXD50N06概述：
    MXD50N06是VDS=60V, ID=50AR , R DS(ON) (Typ.)=11.5mΩ @ VGS=10V的N沟道MOS，MXD50N06提供TO-252封装。
    The MXD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) .
    Those devices are suitable for use in PWM, load switching and general purpose applications.

VDS=60V, ID=50A

  R DS(ON) (Typ.)=11.5mΩ @ VGS=10V

Ultra Low On-Resistance

High UIS and UIS 100% Test

Power switching application

Load switch

MXD50N06订购信息:

MXD50N06  ORDERING INFORMATION
Device	StorageTemperature	Package	Devices Per Reel
MXD50N06	-55°C to 175°C	TO-252	-

MXD50N06典型应用及脚位图：