MXD30N100概述：
    MXD30N100是VDS=30V,ID=100A,RDS(ON)(Typ.)4mΩ,@Vgs=10V,RDS(ON)(Typ.)7mΩ,@Vgs=4.5V的N沟道MOSFET.MXD30N100提供TO-252-2L封装.
    The MXD30N100 uses advanced trench technology and design to provide excellent RDS(ON), with low gate charge .It can be used in a wide variety of applications.

MXD30N100特性：
VDS =30V，ID =100A
RDS(ON)(Typ.)4mΩ @ Vgs=10V
RDS(ON)(Typ.)7mΩ @ Vgs=4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability

MXD30N100应用：
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply

MXD30N100典型应用及引脚图：