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PE58120P是VDS=85V, ID=120A，RDS(ON)<5.4mΩ ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.
PE58120P的丝印是PE58120P.PE58120P提供TO-263封装.

The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE58120P概述：

PE58120P是VDS=85V, ID=120A，RDS(ON)<5.4mΩ ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58120P的丝印是PE58120P.PE58120P提供TO-263封装.

The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE58120P特性：

VDS = 85V, ID = 120 A

RDS(ON) < 5.4mΩ @VGS=10V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE58120P应用：

PWM applications

Load switch

Power management

PE58120P典型应用及引脚：