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PE58200P是VDS=85V,ID=200A，RDS(ON)<3.2mΩ ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.
PE58200P提丝印是PE58200P.PE58200P提供TO-263封装.

The PE58200P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE58200P概述：

PE58200P是VDS=85V,ID=200A，RDS(ON)<3.2mΩ ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58200P提丝印是PE58200P.PE58200P提供TO-263封装.

The PE58200P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE58200P特性：

VDS = 85V, ID = 200A

RDS(ON) < 3.2mΩ @VGS=10V

High Power and current handing capability

Lead free product is acquired

Surface Mount Package

PE58200P应用：

PWM applications

Load switch

Power management

PE58200P典型应用及引脚：