PE8250M概述：
PE8250M是VDS=18V,ID=50A，RDS(ON)<4.2mΩ，@VGS=4.5V，RDS(ON)<6mΩ，@VGS=2.5V，RDS(ON)<10mΩ，@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
PE8250M的丝印是PE8250M.PE8250M提供PDFN3.3x3.3-8L封装.
PE8250M的丝印是PE8250M.PE8250M提供PDFN3.3x3.3-8L封装.
The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE8250M特性：
VDS = 18V, ID = 50A
RDS(ON) < 4.2mΩ @ VGS=4.5V
RDS(ON) < 6mΩ @ VGS=2.5V
RDS(ON) < 10mΩ @ VGS=1.8V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE8250M应用：
PWM applications
Load switch
Power management
Battery Protection
PE8250M典型应用及引脚：
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