MXN3349 Description:
MXN3349 is a P-channel enhanced mode power Mosfet with VDS=-30V, ID=-50A, RDS (ON) (Typ.)=5.8mΩ@VGS=-10V, RDS (ON) (Typ.)=8mΩ@VGS=-4.5V. Provide DFN3x3 packaging.
The MXN3349 uses advanced trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MXN3349 General Features:
VDS=-30V, ID=-50A
RDS(ON)(Typ.)=5.8mΩ@VGS=-10V
RDS(ON)(Typ.)=8mΩ@VGS=-4.5V
Advanced High Cell Density Trench Technology
Low Gate Charge
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MXN3349 Application:
Power Management Switches
Battery Protection Application
MXN3349 Pinout:
MXN3349 Ordering Information:
|
Part Number
|
StorageTemperature
|
Package
|
Devices Per Reel
|
|
MXN3349 |
-55°C to 150°C |
DFN3x3 |
5000 |
MXN3349 Test Circuit：
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