MXN3347概述:
MXN3347是-30V,-35A的,P沟道增强型功率MOSFET,
MXN3347丝印:3347,
MXN3347提供PDFN3.3x3.3-8L封装。
MXN3347丝印:3347,
MXN3347提供PDFN3.3x3.3-8L封装。
The MXN3347 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages aslow as 4.5V.
This device is suitable for use as a load switch or in PWM and a wide varieer applications.
MXN3347特性:
This device is suitable for use as a load switch or in PWM and a wide varieer applications.
MXN3347特性:
VDS =-30V,ID =-35A
RDS(ON) (Typ.)= 9mΩ@VGS=-10V
RDS(ON) (Typ.)=13.5mΩ@VGS=-4.5V
High Power and current handing capability
Lead free product is acquired
Surface mount package
MXN3347丝印:3347
MXN3347提供PDFN3.3x3.3-8L封装
MXN3347应用:
PWM applications
Load switch
Power management
MXN3347典型应用电路图: