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PE8318M PDFN3.3x3.3-8L

    PE8318M是VDS=30V,ID=18A,RDS(ON)<21mΩ@VGS=10V,RDS(ON)<32mΩ@VGS=4.5V的N沟道MOSFET。
    PE8318M的丝印是PE8318M。PE8318M提供PDFN3.3x3.3-8L封装。
    The PE8318M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8318M概述:
        PE8318M是VDS=30V,ID=18A,RDS(ON)<21mΩ@VGS=10V,RDS(ON)<32mΩ@VGS=4.5V的N沟道MOSFET。
        PE8318M的丝印是PE8318M。PE8318M提供PDFN3.3x3.3-8L封装。
        The PE8318M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8318M特性:
    VDS = 30V, ID = 18A 
    RDS(ON) < 21mΩ @ VGS=10V 
    RDS(ON) < 32mΩ@VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired 
    Surface Mount Package

    PE8318M应用:
    PWM applications
    Load switch
    Power management

    PE8318M典型应用及引脚:
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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