CST30N20F Description:
CST30N20F is an N-channel fast switching Mosfet with BVDSS=200V, RDSON=57mΩ, and ID=30A. Provide PDFN5060-8L packaging.
The CST30N20F is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The CST30N20F meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST30N20F Feature:
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST30N20F Product Summary:
|
BVDSS
|
RDSON
|
ID
|
|
200V |
57mΩ |
30A |
CST30N20F PDFN5060-8L Pin Configuration:
CST30N20F Test Circuit:
Avalanche Test Circuit:
Switching Time Test Circuit:
Gate Charge Test Circuit:
CST30N20F Package Mechanical Data-PDFN5060-8L-JQ Single:
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