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CST200N03G TO263

    CST200N03G is a fast switching Mosfet for N-channel with BVDSS=30V, RDSON=1.6m Ω, and ID=200A. Provide TO263 packaging.
    The CST200N03G is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
    The CST200N03G meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
    CST200N03G Description:
        CST200N03G is a fast switching Mosfet for N-channel with BVDSS=30V, RDSON=1.6m Ω, and ID=200A. Provide TO263 packaging.
        The CST200N03G is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
        The CST200N03G meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

    CST200N03G Feature:
    100% EAS Guaranteed 
    Green Device Available 
    Super Low Gate Charge 
    Excellent CdV/dt effect decline 
    Advanced high cell density Trench technology

    CST200N03G Product Summary:
    BVDSS
    RDSON
    ID

    30V

    1.6

    200A


    CST200N03G TO263 Pin Configuration:
    CST200N03G Test Circuit:



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