CST30N06N Description/描述：
CST30N06N是BVDSS=60V,RDSON=24mΩ,ID=30A的N沟道快速切换Mosfets。提供TO252封装。
The CST30N06N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The CST30N06N meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST30N06N Features/特性:
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST30N06N Product Summary/产品概览：
|
BVDSS
|
RDSON
|
ID
|
|
60V |
24mΩ |
30A |
CST30N06N TO252 Pin Configuration/引脚配置：
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