CST80N02F Description/描述:
CST80N02F是BVDSS=20V,RDSON=3.5mΩ,ID=80A的N沟道Mosfet。提供PDFN5060-8L封装。
The CST80N02F is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The CST80N02Fmeet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
CST80N02F Features/特性:
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST80N02F Product Summary:
|
BVDSS
|
RDSON
|
ID
|
|
20V |
3.5 mΩ |
80A |
CST80N02F PDFN5060-8L Pin Configuration:
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