CST3400A概述：
CST3400A是VDS=30V,ID=5.8A,RDS(ON)35mΩ@VGS=4.5V,RDS(ON)45mΩ@VGS=2.5V的N沟道MOSFET.CST3400A提供SOT23-3封装.
The CST3400A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The CST3400A meet the RoHS and Green Product requirement with full function reliability approved.
CST3400A特性：
VDS=30V,ID=5.8A
RDS(ON)35mΩ@VGS=4.5V
RDS(ON)45mΩ@VGS=2.5V
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench technology
CST3400A应用及封装：
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