SIO2622E概述：
SIO2622E is VDS=20V, ID=6A, RDS (ON) (m Ω) Typ17@VGS =4.5V, RDS (ON) (m Ω) Typ21@VGS =2.5V N-channel MOSFET The silk screen of SIO2622E is 2622E SIO2622E provides SOT-23 packaging
SIO2622E is VDS=20V, ID=6A, RDS (ON) (m Ω) Typ17@VGS =4.5V, RDS (ON) (m Ω) Typ21@VGS =2.5V N-channel MOSFET The silk screen of SIO2622E is 2622E SIO2622E provides SOT-23 packaging
SIO2622E是VDS=20V，ID=6A，RDS(ON)(mΩ)Typ17@VGS=4.5V，RDS(ON)(mΩ)Typ21@VGS=2.5V的N沟道MOSFET.SIO2622E的丝印是2622E.SIO2622E提供SOT-23封装.
The SIO2622E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
SIO2622E特性：
VDS=20V ID=6A
RDS(ON)(mΩ)Typ17@VGS=4.5V
RDS(ON)(mΩ)Typ21@VGS=2.5V
ESD Rating:2000VBM
提供SOT-23封装
SIO2622E原理图及封装图：
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