PE82H2G概述:
PE82H2G是DS=18V, ID=120A,RDS(ON)<2.1mΩ @ VGS=4.5V,RDS(ON)<2.5mΩ@VGS=2.5V的N沟道增强型功率MOSFET，
PE82H2G丝印：PE82H2G，PE82H2G提供DFN5x6-8L封装。
The PE82H2G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected。
PE82H2G是DS=18V, ID=120A,RDS(ON)<2.1mΩ @ VGS=4.5V,RDS(ON)<2.5mΩ@VGS=2.5V的N沟道增强型功率MOSFET，
PE82H2G丝印：PE82H2G，PE82H2G提供DFN5x6-8L封装。
The PE82H2G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected。
PE82H2G特性：
VDS= 8V, ID=120A
RDS(ON)<2.1mΩ @ VGS=4.5V
RDS(ON)<2.5mΩ @VGS=2.5V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE82H2G应用:
Battery management
PWM
Load switch
Uninterruptible power supply
PE82H2G典型应用电路图、丝印图、封装图:
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