MXD6888是60V,80A的，N沟道增强型功率MOSFET，
     MXD6888丝印：6888，MXD6888提供TO-252-2L封装

     The MXD6888 is N-channel MOS Field Effect Transistor designed for high current switching　applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching　especially for E-Bike controller applications.
     

VDS=60V, ID=80A

RDS(ON)(Typ.)=6.8mΩ @ VGS=10V

Special Designed for E-Bike Controller　Application

Ultra Low On-Resistance

High h UIS and UIS 100% Test

MXD6888丝印：6888

MXD6888提供TO-252-2L封装

Power Switching Application

Hard Switched and High Frequency　Circuits

Uninterruptible Power Supply