PE15N10概述：
PE15N10是VDS>100V,ID =15A,RDS(ON)<100mΩ@VGS=10V的N沟道增强型功率MOSFET.
PE15N10丝印：15N10,PE15N10提供TO-252-2L封装.
PE15N10丝印：15N10,PE15N10提供TO-252-2L封装.
The PE15N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
PE15N10特性：
VDS>100V,ID =15A
RDS(ON)<100mΩ@VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
PE15N10应用:
Power switching application
Hard switched and high frequency circuits
PE15N10典型应用及引脚图：
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