MXB050N08概述：
    MXB050N08是VDS=85V,ID=120A，RDS(ON)(Typ.)=5.3mΩ，@VGS=10V的N沟道MOSFET.MXB050N08丝印是050N08.MXB050N08提供TO-263封装.
    The MXB050N08 uses deep trench technology to provide excellent RDS(ON) and low gate
charge. It can be used in a wide variety of applications

MXB050N08特性：
VDS=85V, ID=120A
RDS(ON)(Typ.)=5.3mΩ @ VGS=10V
High Power and current handingcapability
Lead free product is acquired
Surface Mount Package

MXB050N08应用：
Battery management
Motor controller and driver
UPS
PWM applications

MXB050N08典型应用及引脚：