MXN3050G概述：
    MXN3050G是VDS=30V,ID=50A，RDS(ON)<9m?，@VGS=10V，RDS(ON)<13m?，@VGS=-4.5V的N-Channel MOSFET.MXN3050G提供DFN5*6-8L封装.
    The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications.

MXN3050G特性：
VDS = 30V,ID = 50A
RDS(ON) < 9m? @ VGS=10V
RDS(ON) < 13m? @ VGS=-4.5V
Low density cell desig
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation

MXN3050G应用：
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply

MXN3050G典型应用及引脚：