PE2012概述：
    PE2012是VDS=18V,ID=12A，RDS(ON)<11mΩ，@VGS=4.5V，RDS(ON)<12mΩ，@VGS=3.8V，RDS(ON)<13mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE2012提供TSSOP-8封装.
    The PE2012 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

PE2012特性：
VDS = 18V, ID = 12A
RDS(ON) < 11mΩ @ VGS=4.5V
RDS(ON) < 12mΩ@VGS=3.8V
RDS(ON) < 13mΩ @VGS=2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package

PE2012应用：
Battery Protection
Load switc

PE2012典型应用及引脚图：