PE58200PA概述：
PE58200PA是VDS=85V,ID=200A，RDS(ON)<3.2mΩ ，@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58200PA的丝印是PE58200P.PE58200PA提供TO-263封装.
The PE58200PA uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE58200PA特性：
VDS = 85V, ID = 200A
RDS(ON) < 3.2mΩ @VGS=10V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE58200PA应用：
PWM applications
Load switch
Power management
PE58200PA典型应用及引脚：
Business consulting
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