PE8209HM1是VDS=18V,ID=10A，RDS(ON)<12mΩ，@VGS=4.5V，RDS(ON)<13mΩ，@VGS=3.8V，RDS(ON)<15.5mΩ，@VGS=3.1V，RDS(ON)<20mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8209HM1的丝印是8209M1.PE8209HM1提供DFN3x3-8L封装.

    The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

VDS = 18V, ID = 10A

RDS(ON) < 12mΩ @VGS=4.5V

RDS(ON) < 13mΩ @VGS=3.8V

RDS(ON) < 15.5mΩ @VGS=3.1V

RDS(ON) < 20m? @VGS=2.5V

ESD Rating: 4000V HBM

High Power and current handing capability

Lead free product is acquired

Surface Mount Package