PE8250M是VDS=18V,ID=50A，RDS(ON)<4.2mΩ，@VGS=4.5V，RDS(ON)<6mΩ，@VGS=2.5V，RDS(ON)<10mΩ，@VGS=1.8V的N-Channel Enhancement Mode Power MOSFET.
    PE8250M的丝印是PE8250M.PE8250M提供PDFN3.3x3.3-8L封装.

    The PE8250M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

VDS = 18V, ID = 50A 

RDS(ON) < 4.2mΩ @ VGS=4.5V 

RDS(ON) < 6mΩ @ VGS=2.5V 

RDS(ON) < 10mΩ @ VGS=1.8V 

ESD Rating: 4000V HBM 

High Power and current handing capability 

Lead free product is acquired 

Surface Mount Package

PWM applications 

Load switch 

Power management 

Battery Protection