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Toshiba launches 100V N-channel power MOSFETs to help achieve miniaturization of power circuits

Time:2023-07-06 Views:834

With the latest generation process, it can provide low on resistance and extended Safe operating area

Toshiba Electronic Components and Storage Devices Co., Ltd. ("Toshiba") today announced the launch of the 100V N-channel Power MOSFET "TPH3R10AQM" manufactured by Toshiba‘s latest generation U-MOS X-H process. The new product is suitable for applications such as switch circuits and hot swappable circuits on industrial equipment power lines used in data centers and communication base stations. This product supports bulk shipment starting today.

TPH3R10AQM has an industry-leading maximum drain source conduction resistance of [2] 3.1m Ω, which is 16% lower than Toshiba‘s current 100V product "TPH3R70APL". Through the same comparison, TPH3R10AQM expands the Safe operating area by 76% [3], making it suitable for linear mode operation. Moreover, reducing the on resistance and expanding the linear working range of the Safe operating area can reduce the number of parallel connections. In addition, its gate threshold voltage range is 2.5V to 3.5V, making it less prone to faults due to gate voltage noise.

The new product adopts a highly compatible SOP Advance (N) packaging.

In the future, Toshiba will continue to expand its Power MOSFET product line, improve power efficiency by reducing losses, and help reduce equipment power consumption.

application

-Power supply for communication equipment such as data centers and communication base stations

-Switching power supply (high-efficiency DC-DC converter, etc.)

characteristic

-Industry leading [2] low conduction resistance: RDS (ON)=3.1m Ω (maximum) (VGS=10V)

-Wide Safe operating area

-High rated junction temperature: Tch (maximum)=175 ℃

Main specifications

(Unless otherwise specified, Ta=25 ℃)

Model device				TPH3R10AQM
absolute maximum rating	Drain source voltage VDSS (V)			100
	Drain current (DC) ID (A)		Tc＝25℃	120
	Junction temperature Tch (℃)			175
Electrical characteristics	Drain source conduction resistance RDS (ON) Maximum value (m Ω)	VGS＝10V		3.1
		VGS＝60V		6.0
	Total gate charge (gate source+gate drain) Qg typical value (nC)			83
	Typical value of gate switch charge Qsw (nC)			32
	Typical Qoss value of output charge (nC)			88
	Typical value of input capacitance Ciss (pF)			5180
package	name			SOP Advance(N)
	Typical size value (mm)			4.9×6.1
Inventory inquiry and purchase				online purchase

Note:

[1] Conducting and shutting down the circuit of system components without shutting down the system during equipment operation.

[2] Toshiba survey as of June 2023.

[3] Pulse width: tw=10ms, VDS=48

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Toshiba launches 100V N-channel power MOSFETs to help achieve miniaturization of power circuits