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MXN30D12M PDFN3.3x3.3-8L

    MXN30D12M是VDS=30V,ID=12A,@VGS=4.5V,RDS(ON)(Typ.)=14mΩ,@VGS=2.5V,RDS(ON)(Typ.)=18mΩ的双N通道MOSFET.
    MXN30D12M提供PDFN3.3x3.3-8L封装.
    The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
    MXN30D12M概述:
        MXN30D12M是VDS=30V,ID=12A,@VGS=4.5V,RDS(ON)(Typ.)=14mΩ,@VGS=2.5V,RDS(ON)(Typ.)=18mΩ的双N通道MOSFET.
        MXN30D12M提供PDFN3.3x3.3-8L封装.
        The MXN30D12M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
     
    MXN30D12M特性:
    VDS=30V,ID=12A
    @VGS=4.5V RDS(ON)(Typ.)=14mΩ
    @VGS=2.5V RDS(ON)(Typ.)=18mΩ
    High density cell design fo ultra low Rdson
    Fully characterized Avalanche voltage and current

    MXN30D12M应用:
    Power switching application
    Hard Switched and High Frequency
    Circuits Uninterruptible Power Supply

    MXN30D12M典型应用及引脚图:
    Please submit your basic information and send an email Sales@ChipSourceTek.com , or call us at 13823761625 (the same number as wechat), and we will contact you as soon as possible!

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