PE2606概述：
PE2606是N-Channel：VDS=20V,ID=6.8A，RDS(ON)<21mΩ@VGS=4.5V，RDS(ON)<28mΩ@VGS=2.5V；P-Channel：VDS=-20V,ID=-7A，RDS(ON)<35mΩ@VGS=-4.5V，RDS(ON)<45mΩ@VGS=-2.5V的双沟道MOSFET.
PE2606提供SOP8封装。
The PE2606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications.
PE2606特性：
N-Channel
VDS=20V,ID=6.8A
RDS(ON)<21mΩ@VGS=4.5V
RDS(ON)<28mΩ@VGS=2.5V
P-Channel
VDS=-20V, ID = -7A
RDS(ON)<35mΩ@VGS=-4.5V
RDS(ON)<45mΩ@VGS=-2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE2606典型应用及引脚图:
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