MXN3388L是VDS =20V, ID =8A,RDS(ON) (Typ.)=15.5mΩ @ V GS =2.5V,RDS(ON) (Typ.)=10.6mΩ @ V GS =3.8V,RDS(ON) (Typ.)=10mΩ @ V GS =4.5V的双N沟道MOSFET,
    MXN3388L丝印MXN3388L,MXN3388L提供DFN3X3-8L 封装。
    The MXN3388L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. 
  
MXN3388L特性：
VDS =20V, ID =8A
RDS(ON) (Typ.)=15.5mΩ @ V GS =2.5V
RDS(ON) (Typ.)=10.6mΩ @ V GS =3.8V

RDS(ON) (Typ.)=10mΩ @ V GS =4.5V

ESD Rating: 2000V HBM

High density cell design for ultra low Rdson

Fully characterized Avalanche voltage and current
MXN3388L提供DFN3X3-8L 封装

Power switching application

Hard Switched and High Frequency Circuits

Uninterruptible Power Supply

MXN3388L ORDERING INFORMATION:

Part Number	StorageTemperature	Package	Devices Per Reel
MXN3388L	-55°C to 150°C	DFN3X3-8L	5000

MXN3388L典型应用电路及封装图：