TXY8205概述:
TXY8205是VDS=20V,ID=6A,RDS(ON)25mΩ@VGS=4.5V,RDS(ON)40mΩ@VGS=2.5V的N沟道MOSFET.
TXY8205提供TSOP8/SOT23-6封装.
TXY8205特性:
VDS=20V,ID=6A
RDS(ON)25mΩ@VGS=4.5V
RDS(ON)40mΩ@VGS=2.5V
High Density cell trench design for low Rds(on)
Rugged and reliable
Surface Mount package
Lead Free Available(Green Product)
TXY8205原理图及引脚图: