MXN2386概述：
    MXN2386是VDS=20V，ID=12A，@VGS=4.5V，RDS(ON)(Typ.)=6m?，@VGS=4.2V，RDS(ON)(Typ.)=6.4m?，@VGS=3.8V，RDS(ON)(Typ.)=6.6m?，@VGS=2.5V，RDS(ON)(Typ.)=8.3m?的Dual N-Channel MOSFET.MXN2386的丝印是NC25.MXN2386提供DFN2x3-6L封装.
    The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested..

MXN2386特性：
VDS =20V，ID =12A
@VGS=4.5V RDS(ON)(Typ.)=6m?
@VGS=4.2V RDS(ON)(Typ.)=6.4m?
@VGS=3.8V RDS(ON)(Typ.)=6.6m?
@VGS=2.5V RDS(ON)(Typ.)=8.3m?
ESD Rating:2000V HBM
High power and current handing capability
Lead free product is acquired
Surface mount package

MXN2386应用：
PWM applications
Load switch

MXN2386典型应用及引脚图：