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单P-MOS

PED3008M PDFN3.3*3.3-8L

    PED3008M是VDS=-30V,ID=-35A,RDS(ON)<12mΩ@VGS=-10V,RDS(ON)<16mΩ@VGS=-4.5V的P沟道MOSFET。
    PED3008M的丝印是3008M,PED3008M提供PDFN3.3*3.3-8L。
    The PED3008M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED3008M概述:
        PED3008M是VDS=-30V,ID=-35A,RDS(ON)<12mΩ@VGS=-10V,RDS(ON)<16mΩ@VGS=-4.5V的P沟道MOSFET。
        PED3008M的丝印是3008M,PED3008M提供PDFN3.3*3.3-8L。
        The PED3008M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED3008M特性:
    VDS = -30V, ID = -35A
    RDS(ON) < 12mΩ @ VGS=-10V
    RDS(ON) < 16mΩ@VGS=-4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED3008M应用:
    PWM applications
    Load switch
    Power management

    PED3008M典型应用及引脚图:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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