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CST20N10 TO252

    CST20N10是BVDSS=100V,RDSON=65mΩ,ID=20A的N沟道快速切换Mosfets。提供TO252封装。
    The CST20N10 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
    The CST20N10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
    CST20N10 Description/描述:
        CST20N10是BVDSS=100V,RDSON=65mΩ,ID=20A的N沟道快速切换Mosfets。提供TO252封装。
        The CST20N10 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
        The CST20N10 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

    CST20N10 Features/特性:
    Super Low Gate Charge
    Green Device Available
    Excellent Cdv/dt effect decline
    Advanced high cell density Trench technology

    CST20N10 Product Summary/产品概览:

    BVDSS
    RDSON
    ID

    100V

    65mΩ

    20A


    CST20N10 TO252 Pin Configuration/引脚配置:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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