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单N-MOS

HYG350N06LA1D/U/V TO-252-2L,TO-252-2L,TO-251-3L,TO-251-3S

    HYG350N06LA1D/U/V是VDS=60V,ID=26A,RDS(ON)=30mΩ(typ.)@VGS=10V,RDS(ON)=37mΩ(typ.)@VGS=4.5V的N通道增强模式Mosfet。
    HYG350N06LA1D/U/V Description/概述:
        HYG350N06LA1D/U/V是VDS=60V,ID=26A,RDS(ON)=30mΩ(typ.)@VGS=10V,RDS(ON)=37mΩ(typ.)@VGS=4.5V的N通道增强模式Mosfet。

    HYG350N06LA1D/U/V Feature/特性:
    60V/26A
    RDS(ON)= 30mΩ(typ.)@VGS = 10V
    RDS(ON)= 37mΩ(typ.)@VGS = 4.5V
    100% Avalanche Tested
    Reliable and Rugged
    Halogen Free and Green Devices Available(RoHS Compliant)

    HYG350N06LA1D/U/V Applications:
    Power Management for DC/DC
    Switching application
    Motor control

    HYG350N06LA1D/U/V Pin Description:

    HYG350N06LA1D/U/V Avalanche Test Circuit:




    HYG350N06LA1D/U/V Device Per Unit:
    Package Type
    Unit
    Quantity

    TO-252-2L

    Tube

    75

    TO-252-2L

    Reel

    2500

    TO-251-3L

    Tube

    75

    TO-251-3S

    Tube

    75

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