服务热线: 13823761625

产品中心

联系我们

当前位置:网站首页 >> 产品中心 >> Mosfet >> 单N-MOS

单N-MOS

SIO2622E SOT-23

     SIO2622E是VDS=20V,ID=6A,RDS(ON)(mΩ)Typ17@VGS=4.5V,RDS(ON)(mΩ)Typ21@VGS=2.5V的N沟道MOSFET.SIO2622E的丝印是2622E.SIO2622E提供SOT-23封装.
    The SIO2622E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.
    This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
    SIO2622E概述:
        SIO2622E是VDS=20V,ID=6A,RDS(ON)(mΩ)Typ17@VGS=4.5V,RDS(ON)(mΩ)Typ21@VGS=2.5V的N沟道MOSFET.SIO2622E的丝印是2622E.SIO2622E提供SOT-23封装.
        The SIO2622E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

    SIO2622E特性:
    VDS=20V ID=6A
    RDS(ON)(mΩ)Typ17@VGS=4.5V
    RDS(ON)(mΩ)Typ21@VGS=2.5V
    ESD Rating:2000VBM
    提供SOT-23封装

    SIO2622E原理图及封装图:
    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品