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单N-MOS

HYG025N04NA1C2 PDFN8L(5x6)

    HYG025N04NA1C2是电压40V,电流19A的N沟道MOSFET,40V/190A,R DS(ON) = 1.4mΩ(typ.)@V GS = 10V,100%Avalanche Tested, Reliable and Rugged,Halogen-Free Devices vailable,
    HYG025N04NA1C2丝印:C2/G025N04/XYMXXXXXX。
    HYG025N04NA1C2提供PDFN8L(5x6)封装。
    HYG025N04NA1C2概述:
        HYG025N04NA1C2是电压40V,电流19A的N沟道MOSFET,40V/190A,R DS(ON) = 1.4mΩ(typ.)@V GS = 10V,100%Avalanche Tested, Reliable and Rugged,Halogen-Free Devices vailable,
        HYG025N04NA1C2丝印:C2/G025N04/XYMXXXXXX。
        HYG025N04NA1C2提供PDFN8L(5x6)封装。

    HYG025N04NA1C2特性:
    40V/190A
    RDS(ON) = 1.4mΩ(typ.)@V GS = 10V
    100%Avalanche Tested
    Reliable and Rugged
    Halogen-Free Devices Available
    HYG025N04NA1C2丝印:C2/G025N04/XYMXXXXXX
    HYG025N04NA1C2提供PDFN8L(5x6)封装

    HYG025N04NA1C2应用:
    Load Switch
    Lithium battery protect board

    HYG025N04NA1C2 Ordering and Marking Information:

    HYG025N04NA1C2 Ordering and Marking Information
    C2
    G025N04
    XYMXXXXXX
    Package Code
    C2: PDFN8L(5x6)
    Date Code
    XYMXXXXXX

    HYG025N04NA1C2典型应用电路及封装图:

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