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单N-MOS

PE58120P TO-263

    PE58120P是VDS=85V, ID=120A,RDS(ON)<5.4mΩ ,@VGS=10V的N-Channel Enhancement Mode Power MOSFET.
    PE58120P的丝印是PE58120P.PE58120P提供TO-263封装.
    The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE58120P概述:
        PE58120P是VDS=85V, ID=120A,RDS(ON)<5.4mΩ ,@VGS=10V的N-Channel Enhancement Mode Power MOSFET.PE58120P的丝印是PE58120P.PE58120P提供TO-263封装.
        The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE58120P特性:
    VDS = 85V, ID = 120 A
    RDS(ON) < 5.4mΩ  @VGS=10V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE58120P应用:
    PWM applications
    Load switch
    Power management

    PE58120P典型应用及引脚:

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