服务热线: 13823761625

产品中心

联系我们

当前位置:网站首页 >> 产品中心 >> Mosfet >> 单N-MOS

单N-MOS

PE8209HM1 DFN3x3-8L

    PE8209HM1是VDS=18V,ID=10A,RDS(ON)<12mΩ,@VGS=4.5V,RDS(ON)<13mΩ,@VGS=3.8V,RDS(ON)<15.5mΩ,@VGS=3.1V,RDS(ON)<20mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8209HM1的丝印是8209M1.PE8209HM1提供DFN3x3-8L封装.
    The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PE8209HM1概述:
        PE8209HM1是VDS=18V,ID=10A,RDS(ON)<12mΩ,@VGS=4.5V,RDS(ON)<13mΩ,@VGS=3.8V,RDS(ON)<15.5mΩ,@VGS=3.1V,RDS(ON)<20mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8209HM1的丝印是8209M1.PE8209HM1提供DFN3x3-8L封装.
        The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PE8209HM1特性:
    VDS = 18V, ID = 10A
    RDS(ON) < 12mΩ @VGS=4.5V
    RDS(ON) < 13mΩ @VGS=3.8V
    RDS(ON) < 15.5mΩ @VGS=3.1V
    RDS(ON) < 20m? @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8209HM1应用:
    PWM applications
    Load switch
    Power management
    Battery protection

    PE8209HM1典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

    *

    *

    *

    *

相关产品