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单N-MOS

PE8260M PDFN3.3x3.3-8L

    PE8260M是VDS=20V,ID=22A,RDS(ON)<4mΩ,@VGS=4.5V,RDS(ON)<5.4mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
    PE8260M的丝印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封装.
    The PE8260M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PE8260M概述:
        PE8260M是VDS=20V,ID=22A,RDS(ON)<4mΩ,@VGS=4.5V,RDS(ON)<5.4mΩ,@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.
        PE8260M的丝印是PE8260M.PE8260M提供PDFN3.3x3.3-8L封装.
        The PE8260M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PE8260M特性:
    VDS = 20V, ID = 22A
    RDS(ON) < 4mΩ @ VGS=4.5V
    RDS(ON) < 5.4mΩ @VGS=2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PE8260M应用:
    PWM applications
    Load switch

    PE8260M典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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