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N+P-MOS

PED2312A UDFN2x2-6L

    PED2312A是N-Channel:VDS=20V,ID=3.5A,RDS(ON)<45mΩ@VGS=4.5V,RDS(ON)<60mΩ@VGS=2.5V;P-Channel:VDS=-20V,ID=-3A,RDS(ON)<80mΩ@VGS=-4.5V,RDS(ON)<110mΩ@VGS=-2.5V的N+P双沟道MOSFET。
    PED2312A的丝印是D2312,PED2312A提供UDFN2x2-6L封装。
    The PED2312A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED2312A概述:
        PED2312A是N-Channel:VDS=20V,ID=3.5A,RDS(ON)<45mΩ@VGS=4.5V,RDS(ON)<60mΩ@VGS=2.5V;P-Channel:VDS=-20V,ID=-3A,RDS(ON)<80mΩ@VGS=-4.5V,RDS(ON)<110mΩ@VGS=-2.5V的N+P双沟道MOSFET。PED2312A的丝印是D2312,PED2312A提供UDFN2x2-6L封装。
        The PED2312A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED2312A特性:
    N-Channel:
        VDS = 20V, ID = 3.5A
        RDS(ON) < 45mΩ@ VGS=4.5V
        RDS(ON) < 60mΩ @VGS=2.5V
    P-Channel
        VDS = -20V, ID = -3A
        RDS(ON) < 80mΩ @ VGS=-4.5V
        RDS(ON) < 110mΩ @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED2312A应用:
    PWM applications
    Power management

    PED2312A典型应用及引脚:


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