CST8G02M Description:
CST8G02M is an N+P dual channel fast switching Mosfet with N-Ch: BVDSS=20V,RDSON=12mΩ,ID=8A;P-Ch：BVDSS=-20V,RDSON=17mΩ, ID=-8A. Provide DFN2020-8L packaging.
The CST8G02M is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The CST8G02M meet the RoHS and Green Product requirement with full function reliability approved.
CST8G02M Feature:
Super Low Gate Charge
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench technology
CST8G02M Product Summary:
|
BVDSS
|
RDSON
|
ID
|
|
20V |
12mΩ |
8A |
|
-20V
|
17mΩ |
-8A
|
CST8G02M DFN2020-8L Pin Configuration:
CST8G02M Package Mechanical Data-DFN2020-8L:
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