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双N-MOS

MXN2386 DFN2x3-6L

    MXN2386是VDS=20V,ID=12A,@VGS=4.5V,RDS(ON)(Typ.)=6m?,@VGS=4.2V,RDS(ON)(Typ.)=6.4m?,@VGS=3.8V,RDS(ON)(Typ.)=6.6m?,@VGS=2.5V,RDS(ON)(Typ.)=8.3m?的Dual N-Channel MOSFET.
    MXN2386的丝印是NC25.MXN2386提供DFN2x3-6L封装.
    The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
    This device is suitable for use as aload switch or in PWM applications. It is ESD protested..

    MXN2386概述:
        MXN2386是VDS=20V,ID=12A,@VGS=4.5V,RDS(ON)(Typ.)=6m?,@VGS=4.2V,RDS(ON)(Typ.)=6.4m?,@VGS=3.8V,RDS(ON)(Typ.)=6.6m?,@VGS=2.5V,RDS(ON)(Typ.)=8.3m?的Dual N-Channel MOSFET.MXN2386的丝印是NC25.MXN2386提供DFN2x3-6L封装.
        The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested..

    MXN2386特性:

    VDS =20V,ID =12A
    @VGS=4.5V RDS(ON)(Typ.)=6m?
    @VGS=4.2V RDS(ON)(Typ.)=6.4m?
    @VGS=3.8V RDS(ON)(Typ.)=6.6m?
    @VGS=2.5V RDS(ON)(Typ.)=8.3m?
    ESD Rating:2000V HBM
    High power and current handing capability
    Lead free product is acquired
    Surface mount package

    MXN2386应用:

    PWM applications
    Load switch

    MXN2386典型应用及引脚图:

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