产品分类
PED30D08M PDFN3.3x3.3-8L
PED30D08M是VDS=30V，ID=22A，RDS(ON)<22mΩ@VGS=10V，RDS(ON)<30mΩ@VGS=4.5V的N沟道MOSFET。PED30D08M的丝印是30D08M，PED30D08M提供PDFN3.3x3.3-8L封装。
The PED30D08M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wid
The PED30D08M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wid
PED30D08M概述：
PED30D08M是VDS=30V，ID=22A，RDS(ON)<22mΩ@VGS=10V，RDS(ON)<30mΩ@VGS=4.5V的N沟道MOSFET。PED30D08M的丝印是30D08M，PED30D08M提供PDFN3.3x3.3-8L封装。
The PED30D08M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PED30D08M特性：
VDS = 30V, ID = 22A
RDS(ON) < 22mΩ @ VGS=10V
RDS(ON) < 30mΩ @VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED30D08M应用：
PWM applications
Load switch
Power management
PED30D08M典型应用及引脚：
请提交您的基本信息，发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系！
关注矽源特公众号
矽源特微信客服
发送邮件
商务QQ客服
13823761625
