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单N-MOS

PED30D12M PDFN3.3x3.3-8L

    PED30D12M是VDS=30V,ID=12A,RDS(ON)<14mΩ@VGS=10V,RDS(ON)<20mΩ@VGS=4.5V的N沟道MOSFER。
    PED30D12M的丝印是30D12M,PED30D12M提供PDFN3.3x3.3-8L封装。
    The PED30D12M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED30D12M概述:
        PED30D12M是VDS=30V,ID=12A,RDS(ON)<14mΩ@VGS=10V,RDS(ON)<20mΩ@VGS=4.5V的N沟道MOSFER。PED30D12M的丝印是30D12M,PED30D12M提供PDFN3.3x3.3-8L封装。
        The PED30D12M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED30D12M特性:
    VDS = 30V, ID = 12A
    RDS(ON) < 14mΩ @ VGS=10V
    RDS(ON) < 20mΩ @VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED30D12M应用:
    PWM applications
    Load switch
    Power management

    PED30D12M典型应用及引脚:

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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